Smart meters need to continuously record electricity consumption data,support energy management system,ladder pricing and electricity consumption analysis,and often run in harsh outdoor environments for a long time.Therefore,the memory chip must meet the requirements of long-term reliable data storage,high and low temperature resistance,anti-interference and low energy consumption,so as to ensure that it can still work stably without maintenance.

 

　　Magnetoresistive random access memory(MRAM)has shown remarkable advantages with its unique tunneling magnetoresistance technology.MRAM has the characteristics of unlimited reading and writing times,high-speed writing,low energy consumption and high logic integration,and has become a non-volatile and high-performance storage scheme.Compared with traditional RAM,MRAM performs better in data retention,reading and writing speed,storage density and anti-interference ability,and can be used in a wide range of applications that require persistent and safe memory.
 

 

　　Therefore,many smart meter manufacturers turn to MRAM technology to achieve important data storage without battery backup.MRAM can keep data for up to 20 years in extreme temperature range.Even when power is cut off unexpectedly,data will not be lost.When power is restored,memory data will be restored,which greatly improves the security and maintenance convenience of the system.

 

　　In order to further enhance the security of smart meters,some power supply systems have also introduced dynamic security mechanisms to support remote updating or resetting of security keys.Combined with MRAM's ability to detect strong magnetic field,it can effectively prevent physical tampering.For example,Radio and Microelectronics(RIM)chose Everspin 4Mb serial SPI MRAM in its RIM789 three-phase smart meter.The smart meter has passed the Russian GOST 52320-2005 certification,and can run safely and stably for 30 years under harsh conditions,with self-diagnosis of faults and resistance to climate,mechanical and electromagnetic interference.

 

　　Everspin 4Mb serial SPI MRAM can achieve a data transmission rate of up to 52MB/s in four-channel mode with four I/O interfaces,and the reading and writing speed even exceeds that of some 8-bit parallel MRAM.Its working frequency reaches 40MHz,and it has unlimited reading and writing durability.It is not only suitable for smart meters,but also widely deployed in the next generation RAID controllers,server event logs,storage caches and programs and data storage of various embedded systems.

 

　　As a well-known electronic component supplier and storage solution technology partner in the industry,Yingshang Microelectronics acts as an agent for various high-performance marm memory chips.If you need to know more about the scheme,please call to discuss.