Logic of new storage technology MRAM/ReRAM/PCM
2026-03-10 10:21:55
In order to break through the bottleneck of traditional storage, new non-volatile storage technologies are emerging, including MRAM (magnetoresistive random access memory), ReRAM (resistive random access memory) and PCM (phase change memory). These technologies are gradually reshaping the storage hierarchy with 1T1R/1S1R structure and native persistence characteristics, showing the following advantages:
Process synchronization: BEOL (Back-end Process) technology represented by MRAM can continuously evolve to 5nm and below with the logic process, filling the gap of embedded storage. This means that new storage can develop synchronously with advanced logic technology and avoid the aggravation of "storage wall" problem.
Performance leapfrogging: The new type of storage has the characteristics of high-speed reading and writing and no need for pre-erasing, which significantly narrows the performance gap between internal memory and external memory. For example, the read-write speed of MRAM is close to that of SRAM, and it is non-volatile and can retain data after power failure.
Diversified forms: In addition to mass-produced MRAM and ReRAM, the industry is actively exploring "transistor-free" ultra-high density schemes such as SOM (selector storage only). These innovations not only improve the storage density, but also further reduce the power consumption and cost.
Shenzhen Ramsun Microelectronics Co.,Ltd（Ramsun International） is a vendor of the seimicondutor componets and the memory IC’s solution with clear market advantage. We still focus on the promotion for some famous semicondutor brand ,and specially take the RAM(Random Access Memory) as our core products.
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